Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device

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Copyright (c) 1995 The Japan Society of Applied Physics
, , Citation Isamu Akasaki et al 1995 Jpn. J. Appl. Phys. 34 L1517 DOI 10.7567/JJAP.34.L1517

1347-4065/34/11B/L1517

Abstract

Quantum well structures composed of GaInN well and GaN barrier were fabricated. Room-temperature stimulated emission by pulsed current injection is observed from group III nitride using the very thin active layer, for the first time.

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10.7567/JJAP.34.L1517