Shuji Nakamura1, Masayuki Senoh Masayuki Senoh1 and Takashi Mukai Takashi Mukai1
Copyright (c) 1993 The Japan Society of Applied Physics
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Citation Shuji Nakamura et al 1993 Jpn. J. Appl. Phys. 32 L8
DOI 10.1143/JJAP.32.L8
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P-GaN/n-InGaN/n-GaN double-heterostructure (DH) blue-light-emitting diodes (LEDs) were fabricated successfully for the first time. The output power was 125 µW and the external quantum efficiency was as high as 0.22% at a forward current of 20 mA at room temperature. The peak wavelength and the full width at half-maximum (FWHM) of the electroluminescence (EL) were 440 nm and 180 meV, respectively. This value FWHM of was the smallest ever reported for blue GaN LEDs.
