Abstract
In addition to amorphous SiO2 and Si3N4, the two key dielectric film materials used in modern silicon devices, the fabrication technology of nonstoichiometric SiOxNy, SiNx, and SiOx compounds is currently under development. Varying the chemical composition of these compounds allows a wide range of control over their physical — specifically, optical and electrical — properties. The development of technology for synthesizing such films requires a detailed understanding of their atomic structure. Current views on the atomic structure of nonstoichiometric silicon nitrides and oxides are reviewed and summarized.