Abstract
Studies of the electron instability effects (EIEs) in structures based in strongly correlated electron systems (SCESs), such as high-temperature superconductors (HTSCs) and doped manganites (compounds with colossal magnetoresistance), are reviewed. These effects manifest themselves in a change of several orders of magnitude in the resistive state of the normal metal–HTSC or normal metal–DM (doped manganite) interface in an electric field under significant current injection conditions. The results of studying HTSC- and doped-manganite-based heterojunctions are considered. EIEs in heterostructures are compared with the electric field effect on the properties of an SCES in thin fllms and gate-containing devices. The general features and distinctions in the physics of these ðhenomena are analyzed.