Li Zhong-Hui et al 2005 Chinese Phys. 14 830 doi:10.1088/1009-1963/14/4/034
Li Zhong-Hui1,3,4, Yu Tong-Jun2, Yang Zhi-Jian2, Feng Yu-Chun1, Zhang Guo-Yi2, Guo Bao-Ping1 and Niu Han-Ben1
Show affiliationsInGaN/GaN multi-quantum well structure with Mg-doped p-type GaN was grown by low-pressure metalorganic vapour phase epitaxy. After rapid-thermal-annealing at 700 and 900 degrees C, both the red-shift and the blue-shift of the photoluminescence (PL) peak, the decreased and the enhancement of the PL intensity were observed. The transmission electron microscopic images showed that InGaN multi-quantum-dots-like (MQD-like) structures with dimensions less than 5×10nm were formed in InGaN wells. The changes of PL spectra could be tentatively attributed to the competition between the red-shift mechanism of the quantum-confined Stark effect and the blue-shift mechanism of the quantum size effect due to MQD-like structures.
Condensed matter: electrical, magnetic and optical
Surfaces, interfaces and thin films
Issue 4 ( 1 April 2005)
Received 14 May 2004, in final form 17 December 2004
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