Abstract
We construct two new area-preserving projections, which map regular hexagons and regular triangles onto circles. Combination of these projections with the inverse Lambert equal-area projection from the disc to the two hemispheres of a sphere provide bi-directional conversions between uniform planar grids with three-fold and six-fold rotational symmetry and corresponding uniform grids on the sphere. An application example is given for the representation of the channeling-modified back-scattered electron yield for hexagonal titanium.
Export citation and abstract BibTeX RIS
1. Introduction
In the materials community, uniform sampling on a sphere (either or ) is used in a variety of applications. Polycrystalline materials are commonly employed in engineering applications; they consist of large numbers of grains, separated from each other by grain boundaries. An individual grain is characterized by the orientation of its crystal (Bravais) lattice with respect to an external reference frame, and this orientation is usually expressed as an Euler angle triplet (φ1, Φ, φ2) [1], as a unit quaternion, q [2], or by Rodrigues parametrization [3]. In numerical simulations, one often desires to generate random sets of grain orientations by means of a uniform sampling of Euler space, or of the rotation space SO(3) (which can be mapped onto . While several methods of uniform sampling of SO(3) have been described in the literature (e.g. [4, 5]), there is still a need for a fast and efficient algorithm that will generate a uniform grid on , suitable for interpolations and for representation of functions expanded in generalized spherical harmonics.
Crystal orientations are usually extracted from electron back-scatter diffraction (EBSD) patterns, which can be obtained in a scanning electron microscope equipped with a special EBSD detector. A sub-micron diameter high energy electron beam is scanned across the sample, and dwells at individual locations for a preset amount of time; the sample is typically oriented at a 70° angle with respect to the incident beam, to maximize the number of back-scattered electrons that are intercepted by the area detector. The distribution of these electrons is not uniform, and is spatially modulated because of the interactions of the outgoing electrons with the crystal lattice; the resulting diffraction pattern on the detector shows sets of parallel lines (Kikuchi bands) of varying widths and orientations [6]. Analysis of the locations and orientations of these bands (usually by means of a Hough transform) then allows for the determination of the orientation of the crystal lattice at the illuminated point. When the electron beam is scanned across a sample region, repeated observation and analysis of the EBSD patterns then results in an orientation map, i.e., a map that shows the variations in crystal orientation as a function of position on the sample surface.
For the numerical simulation of EBSD patterns, one can pre-compute a 'master EBSD pattern' by considering a uniform grid of outgoing beam directions represented by direction cosines on , and computing the back-scatter yield for each orientation; this latter computation involves integrating the Schrödinger equation for an electron traveling through a periodic lattice potential [7]. An individual EBSD pattern can then be computed by interpolating from the grid on , or, more conveniently, by interpolating on a square 2-D grid obtained from the grid by an area-preserving projection [8]. Amongst the seven traditional crystal systems (cubic, tetragonal, orthorhombic, hexagonal, trigonal, monoclinic and anorthic), all but the hexagonal and trigonal symmetries can be represented properly on a square grid. For the hexagonal and trigonal (or rhombohedral) crystal systems, EBSD pattern simulation would benefit from the availability of an area-preserving projection between the sphere and a hexagonal or triangular grid instead of a square grid, since such non-square grids are fully compatible with the rotational and mirror symmetry elements of these two crystal systems. The present contribution derives such area-preserving projections and illustrates how they can be used in the context of dynamical EBSD pattern simulations.
2. Theoretical derivation
2.1. Derivation of the area-preserving projections
Consider a regular hexagon Ha, and an equilateral triangle, Tb, with edge lengths a and b, respectively, and centered at the origin O, as illustrated in figure 1. For each shape, let be a circle with radius R and with the same area as Ha and Tb. Since the areas of the hexagon and the triangle are given by
we have
Each shape is subdivided into triangular sectors. For the hexagon we consider the sextants Ik, k = 0, ..., 5, which are defined as follows (see figure 1):
For (x, y) ∈ Ha ∩ Ik one has x ⩽ α if k = 0, 1, 5 and x ⩾ −α if k = 2, 3, 4, where . For the equilateral triangle we consider the triangular sectors Jℓ, ℓ = 0, 1, 2, defined by
For (x, y) ∈ Tb ∩ Jℓ one has x ⩽ β if ℓ = 0 and −2β ⩽ x ⩽ β if ℓ = 1, 2, where .
In the following, we will define two functions , which map regular hexagons and equilateral triangles onto circles and preserve areas, i.e.
for every .
In order to deduce the formulas for we restrict the discussion for the moment to the dodecant I in figure 1(a), bounded by the lines of equations y = 0 and , and the upper-half J of the sector J0 in figure 1(b), bounded by the lines of equations y = 0 and .
Every half-line in between these bounding lines has the equation y = mx, with for the hexagon and for the equilateral triangle. The mappings and will be defined in such a way that the half-line y = mx is mapped onto the half-line of equation
For the regular hexagon, φ satisfies the conditions
while for the equilateral triangle φ satisfies
These definitions ensure that the bounding half-lines are invariant under the mapping , and that all half-lines y = φ(m)x lie between the bounding half-lines.
Next, we want to ensure that the half-edges of the hexagon Ha and the triangle Tb are each mapped onto the circle arcs inside the respective half-sectors I and J. We take the point M with coordinates (xM, yM) = (xM, m xM) ∈ I. The line OM then intersects the hexagon's half edge at the point Q with coordinates (α, mα), where m = yM/xM (see figure 1(a)); for the equilateral triangle, the point Q has the coordinates (β, mβ) (figure 1(b)).
The mapping (either or will map the point Q onto a point P with coordinates (xP, φ(m)xP), situated on the circle or , so we must have
Hence,
Next we denote , and we choose N such that
A simple calculation shows that
with γ = α for the hexagon, and γ = β for the equilateral triangle. From condition (10) one can easily deduce that
In conclusion, the transformation will map the point (x, y) ∈ I into (X, Y) ∈ I, given by
The function φ will be determined in such a way that , where the Jacobian is defined as
A simple calculation shows that the condition |J(T)| = 1, which is necessary for an equal-area mapping, reduces to
The integration, together with the condition φ(0) = 0, gives
For the hexagon we have γ = α and , so that
and we can easily verify that
as expected. For the equilateral triangle, we have γ = β and , so that
and
as required.
Substituting φ(m) into (13), we finally obtain that the point (x, y) ∈ I (and respectively J) will be mapped into
for the hexagon, and
for the equilateral triangle. It is easy to prove that these relations are valid for the whole sectors I0 and J0, respectively. Next, we wish to extend the mappings and to the whole plane.
2.2. The hexagonal mapping
In this section, we will denote the restriction of to the sextant I0 by . Then we consider the rotation matrices
One can see that, if M ∈ Ik, then , and therefore the transformation at the point M ∈ Ik can be defined as
Further, for (x, y) ∈ I1 we have
In the same manner as before, for (x, y) ∈ I2 we get
Further, for the other sextants, we use the equalities
so finally we obtain that maps the point (x, y) ≠ (0, 0) into (X, Y)H given by
- For (x, y) ∈ I0 ∪ I3,
- For (x, y) ∈ I1 ∪ I4,
- For (x, y) ∈ I2 ∪ I5,
For the origin we define . Figures 2(a) and (b) show how a uniform hexagonal sampling grid inside a regular hexagon is converted to a uniform grid inside the unit circle. Note that grid points that lie on the edge of a hexagon inside the external hexagon (outlined in a thicker line) in (a) are mapped onto a single circle in (b). Figure 3 (left) shows a grid on a disc, obtained by dividing each triangle of the hexagon Ha into 36 small triangles of equal area.
Download figure:
Standard image High-resolution imageDownload figure:
Standard image High-resolution image2.3. The equilateral triangle mapping
Proceeding in the same manner as in the previous section, but using only even values for k in the rotation matrices , we obtain the following relations:
- For (x, y) ∈ J0,
- For (x, y) ∈ J1,
- For (x, y) ∈ J2,
The resulting mapping is illustrated in figures 2(c) and (d); grid points that lie on an internal equilateral triangle (thicker line) are mapped onto circles in (d). Figure 3 (right) shows a grid on a disc, obtained by dividing each triangle of the triangle Tb into 36 small triangles of equal area.
2.4. The inverse hexagonal map
To start, we restrict the discussion again to the first sextant I0 and we determine the inverse of given in (21a). In order to simplify the formulas, we denote and . With these notations, we have X2 + Y2 = η2x2 and (Y/X) = tan θ, whence
Therefore, maps a point (X, Y) ∈ I0 into the point (x, y) ∈ I0 given by
Then, in order to establish the expressions for the other sextants, it is enough to calculate and , since
Finally, after some calculations, we find that maps a point (X, Y)H ≠ (0, 0) into the point (x, y), as follows:
- For (X, Y) ∈ I0 ∪ I3
- For (X, Y) ∈ I1 ∪ I4,
- For (X, Y) ∈ I2 ∪ I5,
2.5. The inverse equilateral triangle map
Defining and , we obtain for the inverse mapping in sector J0 of the equilateral triangle:
Therefore, the inverse mapping for the first sector maps the point (X, Y) ∈ J0 into the point (x, y) ∈ J0 given by
Applying the rotations from the previous section for even values of k we find that maps a point (X, Y)T ≠ (0, 0) into the point (x, y) as follows:
- For (X, Y) ∈ J0
- For (X, Y) ∈ J1
- For (X, Y) ∈ J2
2.6. Mapping onto the sphere
Let be the unit sphere centered at O and let denote its northern and southern hemispheres, respectively. Let be the inverse Lambert equal-area projection with respect to the North Pole, defined by
for all . A complete description of all known spherical projections from a sphere or parts of a sphere to the plane, used in cartography, is realized in [9]. Note that the radius of the circle that is projected onto the (unit-radius) hemisphere must be equal to . For the southern hemisphere changes into .
The Lambert mapping is given by
and for , in (35) changes into .
The regular hexagon Ha that maps onto the circle with radius has the edge , and therefore . For the equilateral triangle we have and . The mapping from the hexagonal grid to the northern hemisphere is then carried out by combining (25a), (25b) and (25c) with (34), and the inverse mapping can be obtained from the combination of (35) with (30a), (30b) and (30c). For the equilateral triangle Tb one combines (26a), (26b) and (26c) with (34) for the forward projection onto the northern hemisphere, and (35), (33a), (33b) and (33c) for the inverse mapping.
Figure 4 shows two grids on the sphere, the images of the planar grids in figure 3.
Download figure:
Standard image High-resolution image3. Spherical configurations of points
Consider the regular hexagon Ha with . By dividing each triangle in the sextants Ik, k = 1, ..., 6, into n small triangles of equal area, we obtain a uniform grid on Ha. Mapping this grid on the two hemispheres of we obtain a spherical grid having 12n2 cells of equal area. The set of their vertices will be denoted by Ωn. Similarly, for the equilateral triangle Tb, with , we construct the set Γn of points of . One has |Ωn| = 6n2 + 2 and |Γn| = 3n2 + 2.
In the following, in order to measure the uniformity of the configurations of points Γn and Ωn, we investigate their energies. For a set ωm = {x1, ..., xm} of distinct points on and a fixed , the Riesz s-energy of the configuration ωm is defined as
where ||·|| denotes the Euclidean norm.
For each point xi ∈ ωm, the point s-energies Es(xi) are defined as
In figures 5 and 6 we have plotted the point energies for Ω6 and Ω10, and in figures 7 and 8 the point energies for Γ8 and Γ14.
Download figure:
Standard image High-resolution imageDownload figure:
Standard image High-resolution imageDownload figure:
Standard image High-resolution imageDownload figure:
Standard image High-resolution imageIn table 1 we give the values of Emax = max{Es(x), x ∈ Ωn} and Emin = min{Es(x), x ∈ Ωn}, for n = 1, ..., 15 and s = −1, 0, 1. In table 2 we give the values of Emax = max{Es(x), x ∈ Γn} and Emin = min{Es(x), x ∈ Γn}, for n = 1, ..., 15 and s = −1, 0, 1.
Table 1. Minimum and maximum point s-energies for s = −1, 0, 1, for the configurations Ωn, for n = 1, ..., 15 (M = 6n2 + 2 points).
M | s = −1 | s = 0 | s = 1 |
---|---|---|---|
8 | Emax = 10.4853 | Emax = −2.4849 | Emax = 5.0689 |
Emin = 10.2925 | Emin = −2.7726 | Emin = 4.7426 | |
26 | Emax = 34.5153 | Emax = −6.5299 | Emax = 20.8190 |
Emin = 34.4382 | Emin = −6.7202 | Emin = 20.3445 | |
56 | Emax = 74.5863 | Emax = −12.5098 | Emax = 48.5741 |
Emin = 74.4259 | Emin = −12.9593 | Emin = 47.5838 | |
98 | Emax = 130.6130 | Emax = −21.7584 | Emax = 88.4603 |
Emin = 130.4211 | Emin = −20.3317 | Emin = 88.9237 | |
152 | Emax = 202.6282 | Emax = −31.2963 | Emax = 140.3429 |
Emin = 202.4187 | Emin = −31.9876 | Emin = 138.2371 | |
218 | Emax = 290.6377 | Emax = −44.1331 | Emax = 204.2238 |
Emin = 290.4174 | Emin = −44.9220 | Emin = 201.5692 | |
296 | Emax = 394.6476 | Emax = −59.2743 | Emax = 280.1038 |
Emin = 394.4165 | Emin = −60.1348 | Emin = 276.8508 | |
386 | Emax = 514.6548 | Emax = −76.7235 | Emax = 367.9834 |
Emin = 514.4160 | Emin = −77.6533 | Emin = 364.1659 | |
488 | Emax = 650.6597 | Emax = −96.4828 | Emax = 467.8627 |
Emin = 939.1819 | Emin = −97.4737 | Emin = 463.4731 | |
602 | Emax = 802.6632 | Emax = −118.5538 | Emax = 579.7419 |
Emin = 802.4154 | Emin = −119.5946 | Emin = 574.7823 | |
728 | Emax = 970.6658 | Emax = −142.9377 | Emax = 703.6209 |
Emin = 970.4152 | Emin = −144.0277 | Emin = 698.0807 | |
866 | Emax = 1154.6690 | Emax = −169.6353 | Emax = 839.4999 |
Emin = 1154.4150 | Emin = −170.7698 | Emin = 833.3825 | |
1016 | Emax = 1354.6715 | Emax = −198.6472 | Emax = 987.3787 |
Emin = 1354.4149 | Emin = −199.8199 | Emin = 980.6952 | |
1178 | Emax = 1570.6734 | Emax = −229.9739 | Emax = 1147.2576 |
Emin = 1570.4148 | Emin = −231.1849 | Emin = 1139.9938 | |
1352 | Emax = 1802.6749 | Emax = −263.6159 | Emax = 1319.1364 |
Emin = 1802.4147 | Emin = −264.8619 | Emin = 1311.3010 |
Table 2. Minimum and maximum point s-energies for s = −1, 0, 1, for the configurations Γn, for n = 1, ..., 15 (M = 3n2 + 2 points).
M | s = −1 | s = 0 | s = 1 |
---|---|---|---|
5 | Emax = 6.2925 | Emax = −1.7329 | Emax = 2.6213 |
Emin = 6.2426 | Emin = −1.7918 | Emin = 2.5689 | |
14 | Emax = 18.5661 | Emax = −3.6120 | Emax = 10.5888 |
Emin = 18.2198 | Emin = −4.2689 | Emin = 9.6234 | |
29 | Emax = 38.6088 | Emax = −6.6015 | Emax = 24.5371 |
Emin = 38.2129 | Emin = −7.4873 | Emin = 22.8109 | |
50 | Emax = 66.6457 | Emax = −10.7258 | Emax = 44.4702 |
Emin = 66.2105 | Emin = −11.8209 | Emin = 41.9540 | |
77 | Emax = 102.6653 | Emax = −15.9947 | Emax = 70.4214 |
Emin = 102.2093 | Emin = −17.2604 | Emin = 66.9938 | |
110 | Emax = 146.6806 | Emax = −22.4131 | Emax = 102.3619 |
Emin = 146.2087 | Emin = −23.8117 | Emin = 98.1167 | |
149 | Emax = 198.6910 | Emax = −29.9837 | Emax = 140.3019 |
Emin = 198.2083 | Emin = −31.5016 | Emin = 135.1930 | |
194 | Emax = 258.6993 | Emax = −38.7083 | Emax = 184.2417 |
Emin = 258.2080 | Emin = −40.3233 | Emin = 178.3021 | |
245 | Emax = 326.7057 | Emax = −48.5880 | Emax = 234.1814 |
Emin = 326.2078 | Emin = −50.2915 | Emin = 227.3898 | |
302 | Emax = 402.7109 | Emax = −59.6235 | Emax = 290.1209 |
Emin = 402.2077 | Emin = −61.4036 | Emin = 282.7012 | |
365 | Emax = 486.7151 | Emax = −71.8154 | Emax = 352.0605 |
Emin = 486.2076 | Emin = −73.6663 | Emin = 343.5703 | |
434 | Emax = 578.7187 | Emax = −85.1642 | Emax = 419.9999 |
Emin = 578.2075 | Emin = −87.0792 | Emin = 410.6446 | |
509 | Emax = 678.7217 | Emax = −99.6702 | Emax = 493.9394 |
Emin = 678.2074 | Emin = −101.6456 | Emin = 483.7417 | |
590 | Emax = 786.7243 | Emax = −155.3335 | Emax = 578.8788 |
Emin = 786.2074 | Emin = −117.3659 | Emin = 562.8214 | |
677 | Emax = 902.7266 | Emax = −132.1545 | Emax = 659.8182 |
Emin = 902.2074 | Emin = −134.2384 | Emin = 647.9168 |
We have also compared the energies of our configurations with the extremal s-energies of m points, defined as
where inf and sup are taken over all m-points subsets of . The determination of s-extremal configurations is a difficult problem of constraint optimization and has applications in physics, chemistry and computer science. For s = 1, the minimization of (36) is the classical Thompson problem of electrons restricted to the sphere and interacting through the Coulomb potential. This problem is relevant in molecular modeling and in the study of certain virus structures. Up to now, one could calculate extremal energies for m ⩽ 200 points and s = −1, 0, 1 and these energies are listed in [10]. We have compared the energies of our configurations Ωn and Γn with the optimal ones, i.e. we have calculated the energies Es(Ωn) for n = 1, ..., 5 and Es(Γn) for n = 1, ..., 8 (see tables 3 and 4, respectively).
Table 3. Riesz s-energies Es(Ωn) and extremal s-energies (M = 6n2 + 2), for s = −1, 0, 1.
M | s = −1 | s = 0 | s = 1 |
---|---|---|---|
8 | E = 41.3629 | E = −10.2273 | E = 19.9494 |
26 | E = 448.3299 | E = −86.0668 | E = 267.5817 |
56 | E = 2087.3101 | E = −358.7790 | E = 1343.8734 |
98 | E = 6398.2823 | E = −1039.4824 | E = 4281.1864 |
152 | E = 15 397.2488 | E = −2421.9798 | E = 10 543.8732 |
Table 4. Riesz s-energies Es(Ωn) and extremal s-energies (M = 3n2 + 2), for s = −1, 0, 1.
M | s = −1 | s = 0 | s = 1 |
---|---|---|---|
5 | E = 15.6814 | E = −4.4205 | E = 6.4747 |
14 | E = 128.8638 | E = −27.8053 | E = 70.3686 |
29 | E = 558.1092 | E = −105.0794 | E = 337.6106 |
50 | E = 1663.3661 | E = −289.7002 | E = 1061.2942 |
77 | E = 3948.6258 | E = −655.5598 | E = 2602.5717 |
110 | E = 8061.8862 | E = −1297.2073 | E = 5430.5968 |
149 | E = 14 795.1468 | E = −2329.9250 | E = 10 122.5225 |
194 | E = 25 084.4073 | E = −3889.7685 | E = 17 363.5015 |
4. Application to electron back-scatter diffraction pattern simulations
The original motivation for the derivation of the mappings in the preceding section was the fact that simulations of EBSD patterns for crystal systems with hexagonal or trigonal Bravais lattices would benefit from the availability of an area-preserving mapping based on a 2D uniform hexagonal sampling grid. In such simulations [11], one computes a 'master EBSD pattern', which is a representation of the back-scattered electron (BSE) yield as a function of the direction in which the electron leaves a crystal. Typically, such a pattern is represented on a spherical surface. From the master pattern one extracts individual EBSD patterns, ideally through a simple interpolation process. The reason for desiring a uniform hexagonal planar sampling grid for hexagonal and trigonal materials is the fact that a square grid cannot properly represent the six-fold and three-fold rotational symmetries of these crystal systems. To reduce the number of simulations that need to be carried out to obtain the master EBSD pattern, one makes use of the point symmetry group of the crystal system, so that only a sub-region of the total orientation space needs to be sampled. Symmetry operators then copy the computed BSE yield to the correct equivalent locations.
We have implemented the hexagonal mapping in combination with a dynamical electron scattering simulation. The basic approach is as follows: a back-scattered electron is generated in the near-surface region of a sample and travels in a direction described by the wave vector k (with length |k| equal to the inverse of the electron wave length λ). The probability that such an electron will leave the sample depends on both the crystal structure of the material and on the depth z inside the sample at which the back-scattering event occurs. It is common practice to represent this probability by an integral of the electron wave probability, evaluated at the scattering sites (the atoms in their lattice positions), over a depth range from the surface (z = 0) to a maximum depth z = z0:
where ri are atom positions in the unit cell, Zi are the atomic numbers and the factors DWi are Debye–Waller factors that represent the diffuseness of the atom cores caused by thermal vibrations. Ψ(r) is the electron wave function, which is typically represented by a Bloch wave expansion (a wave that has the periodicity of the underlying crystal lattice):
The parameters α(j) in (38) are the Bloch wave excitation amplitudes, are the Bloch wave coefficients, the eigenvalues are represented as λ(j) ≡ γ(j) + iq(j), and the vectors g are the reciprocal lattice vectors of the crystal. k0 is the electron wave vector corrected for refraction. The total number of terms in the first summation is equal to the number of reciprocal lattice vectors g taken into account in the simulation. The Bloch wave quantities are obtained by solving a general complex eigenvalue problem, which is essentially a matrix representation of the quantum-mechanical Schrödinger equation [12]. For simplicity in this example simulation, we ignore the energy dependence of the BSE yield; more extensive details can be found in [11].
A simulation of the master EBSD pattern for pure titanium was carried out for an electron energy of 30 keV using equation (37). Figure 9(a) shows the resulting BSE yield represented on the surface of a sphere. Since the crystal structure of Ti is centrosymmetric, only the northern hemisphere is needed, and the Lambert map of this hemisphere is shown in figure 9(b); the hexagonal six-fold symmetry axis is located at the center of the Lambert projection and corresponds to the North–South axis of the sphere in (a). Applying the inverse hexagonal mapping then results in the hexagonal map shown in figure 9(c). While the map is represented in this figure using a standard square grid of pixels, the actual data points are located at the nodes of a uniform hexagonal sampling grid similar to that shown in figure 2(a). The total number of grid points along the horizontal direction is 1001. Note that the projection has been rotated by 90° with respect to the orientation of the hexagon in figure 1 to conform with the standard representation of crystallographic reference frames.
Download figure:
Standard image High-resolution image5. Summary
In this contribution, we have derived area-preserving projections from uniform hexagonal domains and from uniform triangular domains onto circular domains. In combination with the Lambert equal-area projection from the sphere to the disc, these new mappings provide direct bi-directional conversions between uniform planar grids with three-fold or six-fold rotational symmetry and a corresponding uniform grid on the sphere. Explicit expressions are given for both direct and inverse mappings between the hexagonal and triangular domains and the disc. The quality of the resulting grids on the sphere is analyzed by means of the Riesz s-energy of configurations with different numbers of sampling points; the configurational energies are also compared to extremal s-energies.
While area-preserving mappings on the sphere have many applications in science and engineering, we have selected one particular application: the representation of the channeling-modified back-scattered electron yield as a function of direction for crystal systems with hexagonal or trigonal Bravais lattices. An example simulation for hexagonal titanium at a microscope accelerating voltage of 30 kV shows how the projections can be used to represent data with hexagonal symmetry.
Acknowledgments
MDG would like to acknowledge the Office of Naval Research, contract # N00014-12-1-0075, for financial support. Daniela Roşca was supported by the Sectoral Operational Programme Human Resources Development 2007–2013 of the Romanian Ministry of Labor, Family and Social Protection through the Financial Agreement POSDRU/89/1.5/S/62557.