Claude Laure et al 1996 Plasma Sources Sci. Technol. 5 510 doi:10.1088/0963-0252/5/3/018
Plasma assisted evaporation of palladium
Claude Laure
, Pascal Brault, Anne-Lise Thomman, Rod Boswell
, Bernard Rousseau§ and Henriette Estrade-Szwarckopf§
We studied the deposition of palladium on silicon using a high-frequency argon plasma. It is shown that the argon ions are focused and sputtered a biased helicoidal palladium wire. An auxiliary continuous discharge enhancing palladium evaporation rate is obtained for a pressure and bias voltage above 50 m Torr and -200 V respectively, as revealed by optical emission spectroscopy. The growth rate is between 0.5 and 20 Å 
as deduced from x-ray photoelectron spectroscopy. Scanning tunnelling microscopy studies reveal that growth proceeds through nucleation.
- PACS
-
52.77.Dq Plasma-based ion implantation and deposition
52.80.Pi High-frequency and RF discharges
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
- Subjects
- Dates
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Issue 3 (August 1996)
Received 4 March 1996, in final form 1 May 1996
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Plasma assisted evaporation of palladium
Claude Laure et al 1996 Plasma Sources Sci. Technol. 5 510
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