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Plasma assisted evaporation of palladium

Claude Laure-+, Pascal Brault-+, Anne-Lise Thomman-+, Rod Boswell++, Bernard Rousseau§ and Henriette Estrade-Szwarckopf§

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We studied the deposition of palladium on silicon using a high-frequency argon plasma. It is shown that the argon ions are focused and sputtered a biased helicoidal palladium wire. An auxiliary continuous discharge enhancing palladium evaporation rate is obtained for a pressure and bias voltage above 50 m Torr and -200 V respectively, as revealed by optical emission spectroscopy. The growth rate is between 0.5 and 20 Å as deduced from x-ray photoelectron spectroscopy. Scanning tunnelling microscopy studies reveal that growth proceeds through nucleation.


PACS

52.77.Dq Plasma-based ion implantation and deposition

52.50.Dg Plasma sources

52.80.Pi High-frequency and RF discharges

52.25.Os Emission, absorption, and scattering of electromagnetic radiation

52.58.Lq Z-pinches, plasma focus and other pinch devices

Subjects

Plasma physics

Dates

Issue 3 (August 1996)

Received 4 March 1996, in final form 1 May 1996



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