Toshiaki Makabe and Takashi Yagisawa 2009 Plasma Sources Sci. Technol. 18 014016 doi:10.1088/0963-0252/18/1/014016
Toshiaki Makabe and Takashi Yagisawa
Show affiliationsIn this paper, we discuss the successive results of our series of investigations into a two-frequency capacitively coupled plasma in CF4(5%)/Ar, sustained by a very high frequency source and biased by a low frequency source in a collision-dominated region. The nonequilibrium in a collisional radiofrequency plasma is studied in terms of the velocity distribution of charged particles. In the bulk plasma, especially, we discuss the velocity distribution of electrons influenced by the quantum structure of a feed gas molecule, and in the passive ion sheath, we predict the flux velocity distribution of positive ions. We then investigate the active species interacting with a patterned SiO2 wafer surface and predict each species' contribution to the feature profile, and discuss the relationship between the pattern size and the etch rate.
52.40.Hf Plasma-material interactions; boundary layer effects
52.20.Hv Atomic, molecular, ion, and heavy-particle collisions
Issue 1 (February 2009)
Received 28 August 2008, in final form 6 October 2008
Published 14 November 2008
Toshiaki Makabe and Takashi Yagisawa 2009 Plasma Sources Sci. Technol. 18 014016
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