M A Lieberman 2009 Plasma Sources Sci. Technol. 18 014002 doi:10.1088/0963-0252/18/1/014002
The Langmuir isotherm and the standard model of ion-assisted etching
M A Lieberman
Show affiliationsLangmuir is lured to the General Electric Research Laboratory, where he creates a new science—surface chemistry—and christens another—plasma. His atomistic views of gas–surface interactions are extended 65 years later to describe ion-assisted plasma etching, an indispensable process in modern semiconductor device manufacturing.
- PACS
-
85.30.-z Semiconductor devices
81.65.Cf Surface cleaning, etching, patterning
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
- Subjects
- Dates
-
Issue 1 (February 2009)
Received 16 June 2008, in final form 16 July 2008
Published 14 November 2008
-
The Langmuir isotherm and the standard model of ion-assisted etching
M A Lieberman 2009 Plasma Sources Sci. Technol. 18 014002
-
Closely packed luminescent silicon nanocrystals in a distributed-feedback laser cavity
K Dohnalová et al 2008 New J. Phys. 10 063014
-
The Multiplicity of the Hyades and Its Implications for Binary Star Formation and Evolution
J. Patience et al. 1998 The Astronomical Journal 115 1972
-
Cosmology of intersecting brane-world models in Gauss–Bonnet gravity
Hyun Min Lee and Gianmassimo Tasinato JCAP04(2004)009
-
Component-based framework for subsurface simulations
B J Palmer et al 2007 J. Phys.: Conf. Ser. 78 012056
-
Sorting microparticles into lateral streams using a two-phase rectangular electrokinetic array
Mathew Bligh et al 2008 J. Micromech. Microeng. 18 045002
-
Stochastic field equation for the canonical ensemble of an ideal Bose gas
Sigmund Heller and Walter T Strunz 2009 J. Phys. B: At. Mol. Opt. Phys. 42 081001
-
Minimal flavour violation waiting for precise measurements of ΔMs, Sψ
, AsSL, |Vub|, γ and B0s,d→μ+μ−
Monika Blanke et al JHEP10(2006)003
-
Final report on CCM.V-K2 comparison
C Patrick Maggi et al 2009 Metrologia 46 07003
-
Fabrication of piezoelectric microcantilevers using LaNiO3 buffered Pb(Zr,Ti)O3 thin film
T Kobayashi et al 2008 J. Micromech. Microeng. 18 035007
Users also read
What's this?- Nanosecond repetitively pulsed discharges in air at atmospheric pressure—the glow regime
- A Langmuir probe system for high power RF-driven negative ion sources on high potential
- Velocity and texture of a plasma jet created in a plasma torch with fixed minimal arc length
Related review articles
What's this?- High-speed imaging in plasma arc cutting: a review and new developments
- Modelling of diamond deposition microwave cavity generated plasmas
- The status of the database for plasma processing