C S Corr et al 2003 Plasma Sources Sci. Technol. 12 265 doi:10.1088/0963-0252/12/2/318
C S Corr, P G Steen and W G Graham
Show affiliationsA reproducible instability, which appears similar to those reported previously, has been observed and studied in a low-pressure 13.56 MHz inductively coupled gaseous electronics conference rf cell operating in oxygen. The instability has been observed in the form of periodic modulations in the light output, floating potential, electron and positive and negative ion densities. The magnitude and frequency of the modulations is sensitive to the plasma operating conditions and the modulation amplitude has been observed to be as high as 40%. The instability is observed in a pressure and power regime where both the capacitive and inductive modes can exist. The frequency of the oscillations increases with increase in gas pressure from 3 to 21 kHz. This pressure window coincides with the pressure regime where there exists a significant fraction of negative ions in both modes. Time-resolved measurements of the electron energy distribution functions and charged particle densities indicate that at all phases of the instability, the plasma parameters remain close to those of the inductive mode. A global model has been modified for an oxygen discharge and this provides a qualitative description of the instability. The global model predicts a smaller power and pressure window for the instability but it can provide a framework for the discussion of instabilities in weakly electronegative discharges.
52.35.-g Waves, oscillations, and instabilities in plasmas and intense beams
52.25.Dg Plasma kinetic equations
Issue 2 (May 2003)
Received 16 December 2002, in final form 17 March 2003
Published 22 April 2003
C S Corr et al 2003 Plasma Sources Sci. Technol. 12 265
Alberto Vecchio 2002 Class. Quantum Grav. 19 1449
Shih-Yin Lin and Chandralekha Singh 2010 Eur. J. Phys. 31 57
S Velasco et al 1993 Eur. J. Phys. 14 166
J E Nelson 2004 Class. Quantum Grav. 21 S249
E Pavarini et al 2003 Supercond. Sci. Technol. 16 147
A Hizal 1978 J. Phys. D: Appl. Phys. 11 261
R Polacek and U Kaatze 2003 Meas. Sci. Technol. 14 1068
H Yang and C-T Pan 2002 J. Micromech. Microeng. 12 157
Peter Pesic 2005 Eur. J. Phys. 26 183