Z W Xu et al 2009 J. Micromech. Microeng. 19 054003 doi:10.1088/0960-1317/19/5/054003
Z W Xu1,2, F Z Fang1,2,4, Y Q Fu3, S J Zhang1, T Han1 and J M Li2
Show affiliationsA micro/nano-structure fabrication method is developed using focused ion beam implantation (FIBI) and FIB XeF2 gas-assisted etching (FIB-GAE). Firstly, the FIB parameters' influence on the FIBI depth is studied by SEM observation of the FIBI cross-section cutting by FIB. Nanoparticles with 10–15 nm diameter are found to be evenly distributed in the FIBI layer, which can serve as a XeF2-assisted etching mask when the ion dose is larger than 1.4 × 1017 ions cm−2. The FIBI layers being used as the etching mask for the subsequent FIB-GAE process are explored to create different micro/nano-structures such as nano-gratings, nano-electrode and sinusoidal microstructures. It is found that the method of combining FIBI with subsequent FIB-GAE is efficient and flexible in micro/nano-structuring, and it can effectively remove the redeposition effect compared with the FIB milling method.
81.16.-c Methods of nanofabrication and processing
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
Surfaces, interfaces and thin films
Issue 5 (May 2009)
Received 22 September 2008, in final form 12 December 2008
Published 14 April 2009
Z W Xu et al 2009 J. Micromech. Microeng. 19 054003
The ATLAS Collaboration et al 2008 JINST 3 S08003
C. H. Chen and M. Jura 2001 ApJ 560 L171
Changqing Yi et al 2007 Nanotechnology 18 025102
Ken Hsieh et al JHEP12(2006)067
C. H. Chen et al. 2005 ApJ 634 1372
Ken Hsieh and Markus A. Luty JHEP06(2007)062
Lois Curfman McInnes et al 2007 J. Phys.: Conf. Ser. 78 012046
Stephen J Pyne 2009 Environ. Res. Lett. 4 031004
Pavlos Vranas 2007 J. Phys.: Conf. Ser. 78 012080