Xiaoming Chen et al 2008 J. Micromech. Microeng. 18 037003 doi:10.1088/0960-1317/18/3/037003
Xiaoming Chen1, Jilei Lin1, Ding Yuan1, Pengliang Ci1, Peisheng Xin1, Shaohui Xu1 and Lianwei Wang1,2
Show affiliationsA silicon microchannel plate (Si MCP) is of large interest for electron multiplication. Conventional fabrication processes utilize an etching process on the front side and wafer thinning on the backside. In this note, a process based on electrochemical etching, developed to generate a gap between the device layer and the substrate, is presented. A sample containing a microchannel through-hole structure can be directly obtained with a laser cut by scanning the laser beam on the surface without cutting through the wafer. An oxidation step is used to increase the MCP's electrical resistance. After dry oxidation at 900 °C, structure distortion is observed in the free-standing sample. Thus, oxidizing before cutting the microchannel plate from the substrate is recommended.
85.60.Ha Photomultipliers; phototubes and photocathodes
72.80.Cw Elemental semiconductors
Condensed matter: electrical, magnetic and optical
Surfaces, interfaces and thin films
Issue 3 (March 2008)
Received 20 July 2007, in final form 21 December 2007
Published 28 January 2008
Xiaoming Chen et al 2008 J. Micromech. Microeng. 18 037003
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Adriaan M H van der Veen et al 2005 Metrologia 42 08003
Gan Xu et al 2007 Metrologia 44 02001
S Tamate et al 2009 New J. Phys. 11 093025
A Higashiya et al 2008 New J. Phys. 10 053033
Birol Ozturk et al 2007 Nanotechnology 18 365302
Jia-Lin Sun et al 2008 Nanotechnology 19 085703
Luo Lin and Fan En-Gui 2009 Chinese Phys. Lett. 26 050203
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