H X Qian et al 2008 J. Micromech. Microeng. 18 035003 doi:10.1088/0960-1317/18/3/035003
H X Qian1, Wei Zhou2, Jianmin Miao2, Lennie E N Lim2 and X R Zeng1
Show affiliationsLocalized Ga implantation by means of a focused ion beam and subsequent deep reactive ion etching is used to fabricate microstructures or nanostructures in Si. It is found that the area irradiated with the focused ion beam acts as an etch stop in reactive ion etching. The etch rate ratio between the unimplanted and Ga-implanted area increases to 2.56 with an increasing Ga ion dose up to 1.59 × 1016 ions cm−2. However, the etch rate ratio decreases with further increase in ion dose and the surface of the etched Si microstructures is concave due to the effect of ion sputtering during focused ion irradiation. This technique is promising for the fabrication of 3D nanostructures in Si.
61.80.Jh Ion radiation effects
Surfaces, interfaces and thin films
Issue 3 (March 2008)
Received 17 October 2007, in final form 3 December 2007
Published 17 January 2008
H X Qian et al 2008 J. Micromech. Microeng. 18 035003
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