Yanqing Lu et al 2006 J. Micromech. Microeng. 16 692 doi:10.1088/0960-1317/16/4/004
Yanqing Lu, Venkata Chivukula, Ming Wang and Hai-Feng Ji
Show affiliationsThis paper uses finite element design for optimization of piezoresistive silicon covered SiO2 microbridges. Resistance changes of the microbridge due to the surface stress changes were systematically investigated by varying Si piezoresistor geometries and the boron doping concentrations in silicon. Our simulation results show that the resistance change of the microbridge is directly related to the arcuation of the microbridges and a better ΔR/R response can be obtained with a thinner and narrower silicon piezoresistor. However, the S/N ratio was not significantly affected by the SiO2 dimensions. A fabrication process of silicon covered SiO2 microbridges is also reported.
85.30.De Semiconductor-device characterization, design, and modeling
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
Issue 4 (April 2006)
Received 1 November 2005, in final form 11 December 2005
Published 6 March 2006
Yanqing Lu et al 2006 J. Micromech. Microeng. 16 692
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