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Advanced plasma processing combined with trench isolation technology for fabrication and fast prototyping of high aspect ratio MEMS in standard silicon wafers

E Sarajlić1, M J de Boer1, H V Jansen1, N Arnal2, M Puech2, G Krijnen1 and M Elwenspoek1

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A bulk micromachining technology for fabrication of micro electro mechanical systems (MEMS) in a standard silicon wafer is presented. A fabrication process, suitable for full integration with on-chip electronics, employs advanced plasma processing to etch, passivate and release micromechanical structures in a single plasma system, and vertical trench isolation to obtain electrical isolation between the released components. Distinct electrical domains can be defined even on movable parts. The sophisticated electrical isolation between high-aspect-ratio single-crystal silicon (SCS) components allows simplification of the fabrication and improvement of the performance of existing devices and design of entirely new MEMS. The presented technology is an attractive platform for both fabrication and rapid prototyping of MEMS. This is due to a short processing time, a large freedom of design, high process flexibility and low-cost of the starting SCS substrate relative to SOI substrates. Several example microstructures demonstrating the capabilities of this technology have been successfully fabricated.


PACS

85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

81.20.Wk Machining, milling

52.77.Bn Etching and cleaning

81.65.Cf Surface cleaning, etching, patterning

85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Subjects

Electronics and devices

Surfaces, interfaces and thin films

Plasma physics

Condensed matter: structural, mechanical & thermal

Nanoscale science and low-D systems

Dates

Issue 9 (September 2004)

Received 22 March 2004

Published 20 August 2004



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