E Sarajlić et al 2004 J. Micromech. Microeng. 14 S70 doi:10.1088/0960-1317/14/9/012
E Sarajlić1, M J de Boer1, H V Jansen1, N Arnal2, M Puech2, G Krijnen1 and M Elwenspoek1
Show affiliationsA bulk micromachining technology for fabrication of micro electro mechanical systems (MEMS) in a standard silicon wafer is presented. A fabrication process, suitable for full integration with on-chip electronics, employs advanced plasma processing to etch, passivate and release micromechanical structures in a single plasma system, and vertical trench isolation to obtain electrical isolation between the released components. Distinct electrical domains can be defined even on movable parts. The sophisticated electrical isolation between high-aspect-ratio single-crystal silicon (SCS) components allows simplification of the fabrication and improvement of the performance of existing devices and design of entirely new MEMS. The presented technology is an attractive platform for both fabrication and rapid prototyping of MEMS. This is due to a short processing time, a large freedom of design, high process flexibility and low-cost of the starting SCS substrate relative to SOI substrates. Several example microstructures demonstrating the capabilities of this technology have been successfully fabricated.
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
81.65.Cf Surface cleaning, etching, patterning
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
Surfaces, interfaces and thin films
Issue 9 (September 2004)
Received 22 March 2004
Published 20 August 2004
E Sarajlić et al 2004 J. Micromech. Microeng. 14 S70
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F. K. Röpke et al. 2007 ApJ 668 1132
Y Takahashi 2007 J. Phys.: Conf. Ser. 65 012022
Hajime Takami et al. 2006 ApJ 639 803
K. Shinozaki et al. 2002 ApJ 571 L117
Jürg Diemand et al. 2006 ApJ 649 1