Chunchieh Huang et al 2002 J. Micromech. Microeng. 12 767 doi:10.1088/0960-1317/12/6/307
Chunchieh Huang1, Ahmed Naguib2, Elias Soupos3 and Khalil Najafi1
Show affiliationsMEMS piezoresistive sound detectors have been fabricated using the dissolved wafer process for the first time. The sensors utilize stress compensated PECVD ultra-thin silicon-nitride/oxide membrane together with monocrystalline ion-implanted p++ silicon piezoresistors to achieve high sensitivity. Tests reveal that sensors with a diaphragm size of 710 μm have a static sensitivity of 1.1 μV VPa−1 with 2% non-linearity over an operating pressure range of 10 kPa. This sensitivity is substantially larger than that of commercially available microfabricated sensors. Furthermore, the new sensor's dynamic response is found to be flat (within ±2.5 dB) over a frequency range extending up to 10 kHz. This paper contributes to existing literature in the field by demonstrating a new way of fabricating capable MEMS piezoresistive pressure sensors, hence adding to the overall versatility of the technology and associated range of applications.
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
85.30.-z Semiconductor devices
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.)
47.85.-g Applied fluid mechanics
85.40.Ry Impurity doping, diffusion and ion implantation technology
52.77.Dq Plasma-based ion implantation and deposition
43.38.+n Transduction; acoustical devices for the generation and reproduction of sound
Issue 6 (November 2002)
Received 19 April 2002, in final form 9 August 2002
Published 5 September 2002
Chunchieh Huang et al 2002 J. Micromech. Microeng. 12 767
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