Zhihong Li et al 2002 J. Micromech. Microeng. 12 162 doi:10.1088/0960-1317/12/2/310
Study on the application of silicide in surface micromachining
Zhihong Li1, Guobing Zhang, Wei Wang, Yilong Hao, Ting Li and Guoying Wu
Show affiliationsIn this paper, we have applied silicide in surface micromachining technology to reduce the series resistance in devices, thus improving the dynamic performance of MEMS devices, especially for RF MEMS components. The compatibility with silicide for micromachining technology, improvement in resistance by using silicide and the issue of residue stress is studied. The experimental results show that CoSi2 and PtSi are good candidates for the grounded polysilicon layer and structural polysilicon layer respectively. After silicide is applied, the sheet resistivity becomes less than 2.0 from 200 Ω/
for the grounded polysilicon layer, and 2.5 from 60 Ω/ for the structural polysilicon layer respectively.
- PACS
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
- Subjects
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Soft matter, liquids and polymers
- Dates
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Issue 2 (March 2002)
Received 14 September 2001, in final form 17 January 2002
Published 18 February 2002
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Study on the application of silicide in surface micromachining
Zhihong Li et al 2002 J. Micromech. Microeng. 12 162
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