Hongrui Jiang et al 2002 J. Micromech. Microeng. 12 87 doi:10.1088/0960-1317/12/1/314
Hongrui Jiang1,5, Kyutae Yoo1, Jer-Liang Andrew Yeh2,6, Zhihong Li1,4,7 and Norman C Tien3
Show affiliationsA silicon micromachining method that is able to create deep silicon dioxide blocks at selected locations in a silicon substrate is presented. The process combines deep-reactive-ion etching (DRIE), thermal oxidation, deposition of silicon dioxide and optional planarization. Design issues and parameters for the creation of such blocks are discussed. The selectively defined silicon dioxide blocks allow the integration of silicon surface and bulk micromachining and thick large-area isolation regions for integrated circuits. The performance enhancement that this approach enables is exemplified in the fabrication of an on-chip tunable capacitor and a monolithic transformer on 20-μm-deep silicon dioxide blocks.
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
Issue 1 (January 2002)
Received 22 August 2001, in final form 24 October 2001
Published 11 December 2001
Hongrui Jiang et al 2002 J. Micromech. Microeng. 12 87
M. Takamiya 1999 ApJS 122 109
O Hosten et al 2003 J. Phys. B: At. Mol. Opt. Phys. 36 2455
Z Akdeniz et al 2005 J. Phys. B: At. Mol. Opt. Phys. 38 2933
Bogdan F Gh Popescu et al 2009 Phys. Med. Biol. 54 651
M M Taddei et al 2009 Eur. J. Phys. 30 965
Eunja Kim et al 1994 J. Phys.: Condens. Matter 6 9561
Woo-Gwang Jung et al 2006 Nanotechnology 17 54
Eunja Kim et al 1992 J. Phys.: Condens. Matter 4 6443
John D Boice Jr et al 2008 J. Radiol. Prot. 28 303