E Socher et al 2001 J. Micromech. Microeng. 11 574 doi:10.1088/0960-1317/11/5/320
E Socher, O Bochobza-Degani and Y Nemirovsky
Show affiliationsA novel sensing structure and realization method is proposed for complementary metal-oxide semiconductor (CMOS) compatible thermoelectric uncooled infrared microsensors. The structure enables high sensitivity and excellent thermal isolation in sensor pixels with small dimensions suitable for two-dimensional thermal imaging. Front-side dry micromachining allows fast CMOS post-processing, small pixel pitch and integration with on-chip CMOS readout. Prototype sensors with an area of 70×70 µm2 achieved a measured noise equivalent power of 0.36 nW Hz-1/2 and a response time of 3 ms.
85.80.Fi Thermoelectric devices
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
42.79.Pw Imaging detectors and sensors
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
Instrumentation and measurement
Issue 5 (September 2001)
Received 14 February 2001, in final form 12 July 2001
Published 9 August 2001
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