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Nanoscale electronic devices on carbon nanotubes

Philip G Collins-+, Hiroshi Bando++ and A Zettl-+

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Conductivity measurements were performed on bundles of single-walled carbon nanotubes with the aid of a scanning tunneling microscope (STM). Semimetallic current-voltage (I-V) characteristics generally indicated the bundles to be electronically similar to graphite. However, by moving the STM tip along the length of the nanotubes, sharp deviations in the I-V characteristics could also be observed. Well-defined positions were found at which the nanotube transport current changed abruptly from a graphitic response to one that is highly nonlinear and asymmetric, including near-perfect rectification. This abrupt change in the nanotube transport suggests that the STM tip had passed a region of the nanotube which acts less like a wire than it does a Schottky barrier or other heterojunction. Similar on-tube nanodevices have been theoretically predicted for point defects in individual carbon nanotubes and are consistent with our observations.


PACS

72.80.Rj Fullerenes and related materials

68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)

73.30.+y Surface double layers, Schottky barriers, and work functions

81.07.De Nanotubes

Subjects

Condensed matter: electrical, magnetic and optical

Surfaces, interfaces and thin films

Nanoscale science and low-D systems

Dates

Issue 3 (September 1998)

Received 6 January 1998



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