V Rousset et al 1996 Nanotechnology 7 144 doi:10.1088/0957-4484/7/2/008
using electron beam lithography
V Rousset
, S Itoua
, C Joachim
, F Tsobnang
, B Rousset§ and H H Pham§
A process is presented to fabricate a coplanar buried metal -
- metal junction on the
surface. The
surface is etched with
reactive ion etching (RIE) through a PMMA mask where the junction patterns have been defined using the e-beam technique. The buried AuPd metallic wires of the junction, 200 nm in width and 10 nm in thickness, are fabricated by the lift-off technique. After the RIE step, the difficulties of reaching an electrode separation in the 40 nm range on
are also discussed.
Issue 2 (June 1996)
Received 19 October 1994, accepted for publication 12 September 1995
using electron beam lithography
V Rousset et al 1996 Nanotechnology 7 144
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