Aurélie Pierret et al 2010 Nanotechnology 21 065305 doi:10.1088/0957-4484/21/6/065305
Aurélie Pierret1, Moïra Hocevar1,2, Silke L Diedenhofen3, Rienk E Algra1,4,5, E Vlieg5, Eugene C Timmering1, Marc A Verschuuren1, George W G Immink1,6, Marcel A Verheijen1,6 and Erik P A M Bakkers1
Show affiliationsA generic process has been developed to grow nearly defect-free arrays of (heterostructured) InP and GaP nanowires. Soft nano-imprint lithography has been used to pattern gold particle arrays on full 2 inch substrates. After lift-off organic residues remain on the surface, which induce the growth of additional undesired nanowires. We show that cleaning of the samples before growth with piranha solution in combination with a thermal anneal at 550 °C for InP and 700 °C for GaP results in uniform nanowire arrays with 1% variation in nanowire length, and without undesired extra nanowires. Our chemical cleaning procedure is applicable to other lithographic techniques such as e-beam lithography, and therefore represents a generic process.
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
81.40.Gh Other heat and thermomechanical treatments
81.16.Rf Nanoscale pattern formation
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
Surfaces, interfaces and thin films
Condensed matter: structural, mechanical & thermal
Issue 6 (10 February 2010)
Received 4 November 2009, in final form 17 December 2009
Published 8 January 2010
Aurélie Pierret et al 2010 Nanotechnology 21 065305
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