Hideo Kaiju et al 2010 Nanotechnology 21 015301 doi:10.1088/0957-4484/21/1/015301
Hideo Kaiju1,2, Kenji Kondo1, Akito Ono1, Nobuyoshi Kawaguchi1, Jonghan Won3, Akihiko Hirata3, Manabu Ishimaru3, Yoshihiko Hirotsu3 and Akira Ishibashi1
Show affiliationsQuantum cross (QC) devices which consist of two Ni thin films deposited on polyethylene naphthalate substrates with their edges crossing have been fabricated and their current–voltage characteristics have been investigated. The cross-sectional area between the two Ni electrodes, which was obtained without the use of electron-beam or optical lithography, can be as small as 17 nm × 17 nm. We have successfully obtained ohmic current–voltage characteristics, which show good agreement with calculation results within the framework of the modified Anderson model. The calculated results also predict a high switching ratio in excess of 100 000:1 for QC devices having the molecule sandwiched between the Ni electrodes. This indicates that QC devices having the molecule can be expected to have potential application in novel switching devices.
85.35.-p Nanoelectronic devices
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
Issue 1 (8 January 2010)
Received 21 May 2009
Published 30 November 2009
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