J Kalden et al 2010 Nanotechnology 21 015204 doi:10.1088/0957-4484/21/1/015204
J Kalden1, C Tessarek2, K Sebald1, S Figge2, C Kruse2, D Hommel2 and J Gutowski1
Show affiliationsWe present electrically driven luminescence from single InGaN quantum dots embedded into a light emitting diode structure grown by metal–organic vapor-phase epitaxy. Single sharp emission lines in the green spectral region can be identified. Temperature dependent measurements demonstrate thermal stability of the emission of a single quantum dot up to 150 K. These results are an important step towards applications like electrically driven single-photon emitters, which are a basis for applications incorporating plastic optical fibers as well as for modern concepts of free space quantum cryptography.
85.60.Jb Light-emitting devices
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.)
Condensed matter: electrical, magnetic and optical
Surfaces, interfaces and thin films
Issue 1 (8 January 2010)
Received 17 August 2009
Published 30 November 2009
J Kalden et al 2010 Nanotechnology 21 015204
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