Control of the size of Cu nanorods vapor-deposited at an oblique angle (~85°) by oxygen-mediated growth was investigated using scanning electron microscopy (SEM) and x-ray diffraction (XRD). It was observed that exposure of Cu nanorods to the oxygen ambient periodically resulted in a reduction in the diameter of the nanorods as well as an increase in the areal density of the nanorods. This oxygen-induced modification to the nanorod growth is attributed to the higher energy barrier for Cu adatom migration on the oxide surface at room temperature; this reduces the rod diameter. At a low annealing temperature of ~300 °C, the SEM images show that the nanorods have densified and formed a continuous film structure, which is consistent with the sintering phenomenon. The XRD and SEM analyses show that the coalescent/grain growth rate for Cu nanorods with smaller diameters is enhanced due to the size effect. This low temperature sintering characteristic of the Cu nanorod array has great potential for being utilized in wafer bonding for three-dimensional integration of devices.