L Liao et al 2009 Nanotechnology 20 085203 doi:10.1088/0957-4484/20/8/085203
L Liao1, Z Zhang1, B Yan1, Z Zheng1, Q L Bao2, T Wu1, C M Li2, Z X Shen1, J X Zhang3, H Gong3, J C Li4 and T Yu1,5
Show affiliationsWe report the properties of a field effect transistor (FET) and a gas sensor based on CuO nanowires. CuO nanowire FETs exhibit p-type behavior. Large-scale p-type CuO nanowire thin-film transistors (104 devices in a 25 mm2 area) are fabricated and we effectively demonstrate their enhanced performance. Furthermore, CuO nanowire exhibits high and fast response to CO gas at 200 °C, which makes it a promising candidate for a poisonous gas sensing nanodevice.
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
82.80.-d Chemical analysis and related physical methods of analysis
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
Instrumentation and measurement
Issue 8 (25 February 2009)
Received 10 November 2008, in final form 11 December 2008
Published 2 February 2009
L Liao et al 2009 Nanotechnology 20 085203
Dora A Napolitano and Aliya S S Ryan 2007 Environ. Res. Lett. 2 045005
Matt Finer et al 2009 Environ. Res. Lett. 4 034005
Thomas E. Harrison et al. 2009 The Astronomical Journal 137 4061
Charles H. Lineweaver 1998 ApJ 505 L69
T Azuhata et al 1995 J. Phys.: Condens. Matter 7 L129
P Astone et al 2003 Class. Quantum Grav. 20 S665
P Astone et al 2005 Class. Quantum Grav. 22 S1243
Matthew Kocoloski et al 2009 Environ. Res. Lett. 4 034008
V M Galynsky et al 2004 J. Phys. A: Math. Gen. 37 5083