Qiaojian Huang et al 2009 Nanotechnology 20 075706 doi:10.1088/0957-4484/20/7/075706
Qiaojian Huang1, Carmen M Lilley1 and Ralu Divan2
Show affiliationsElectromigration in copper (Cu) nanowires deposited by electron beam evaporation has been investigated using both resistance measurement and the in situ scanning electron microscopy technique. During electromigration, voids formed at the cathode end while hillocks (or extrusions) grew close to the anode end. The failure lifetimes were measured for various applied current densities and the mean temperature in the wire was estimated. Electromigration activation energies of 1.06 eV and 0.94 eV were found for the wire widths of 90 nm and 141 nm, respectively. These results suggest that the mass transport of Cu during electromigration mainly occurs along the wire surfaces. Further investigations of the Auger electron spectrum show that both Cu atoms and the surface contaminants of carbon and oxygen migrate from cathode to anode under the electrical stressing.
73.63.-b Electronic transport in nanoscale materials and structures
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
61.72.Qq Microscopic defects (voids, inclusions, etc.)
Condensed matter: electrical, magnetic and optical
Surfaces, interfaces and thin films
Issue 7 (18 February 2009)
Received 12 September 2008, in final form 10 December 2008
Published 26 January 2009
Qiaojian Huang et al 2009 Nanotechnology 20 075706
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