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Giant piezoelectric resistance in ferroelectric tunnel junctions

Yue Zheng1 and C H Woo

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The effect of an applied mechanical stress on the tunneling conductance of a ferroelectric tunnel barrier between substrates and dissimilar electrodes is studied. Using a thermodynamic model and taking into account polarization charge screening in the electrodes and the near-surface inhomogeneous polarization distribution, the tunneling conductance is calculated as a function of the applied stress. It is found that reversing an applied stress can also change the tunnel barrier sufficiently to produce an effect similar to the giant electro-resistance one due to polarization reversal, which is particularly significant near the stress-dependent paraelectric/ferroelectric phase transition. Indeed, the sensitivity is adequate for high-sensitivity electronic and mechanical sensors, memories and other nanodevices.


PACS

73.40.Gk Tunneling

77.80.Bh Phase transitions and Curie point

77.84.Dy Niobates, titanates, tantalates, PZT ceramics, etc.

65.40.G- Other thermodynamical quantities

77.22.Ej Polarization and depolarization

77.65.-j Piezoelectricity and electromechanical effects

Subjects

Condensed matter: electrical, magnetic and optical

Surfaces, interfaces and thin films

Condensed matter: structural, mechanical & thermal

Dates

Issue 7 (18 February 2009)

Received 23 October 2008, in final form 7 January 2009

Published 23 January 2009



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