We have developed manufacturable approaches for forming single, vertically aligned carbon nanotubes, where the tubes are centered precisely, and placed within a few hundred nm of 1–1.5 µm deep trenches. These wafer-scale approaches were enabled by using chemically amplified resists and high density, low pressure plasma etching techniques to form the 3D nanoscale architectures. The tube growth was performed using dc plasma-enhanced chemical vapor deposition (PECVD), and the materials used in the pre-fabricated 3D architectures were chemically and structurally compatible with the high temperature (700 °C) PECVD synthesis of our tubes, in an ammonia and acetylene ambient. Such scalable, high throughput top-down fabrication processes, when integrated with the bottom-up tube synthesis techniques, should accelerate the development of plasma grown tubes for a wide variety of applications in electronics, such as nanoelectromechanical systems, interconnects, field emitters and sensors. Tube characteristics were also engineered to some extent, by adjusting the Ni catalyst thickness, as well as the pressure and plasma power during growth.