Ayan Kar et al 2009 Nanotechnology 20 065704 doi:10.1088/0957-4484/20/6/065704
Ayan Kar1, Jianyong Yang1, Mitra Dutta1,2, Michael A Stroscio1,2,3, Jyoti Kumari4 and M Meyyappan4
Show affiliationsTin oxide nanowires have been grown on p-type silicon substrates using a gold-catalyst-assisted vapor–liquid–solid growth process. The nanowires were annealed in the presence of oxygen at 700 °C for different time intervals. The changes in material properties of the nanowires after annealing were investigated using various characterization techniques. Annealing improves the crystal quality of the nanowires as seen from Raman spectroscopy analysis. Photoluminescence (PL) data indicates a decrease in the oxygen vacancies and defects after annealing, affecting the luminescence from the nanowires. In addition, x-ray photoelectron spectroscopy (XPS) was used to obtain the changes in the tin and oxygen atomic concentrations before and after annealing, from which the stoichiometry was calculated.
79.60.Jv Interfaces; heterostructures; nanostructures
78.30.Hv Other nonmetallic inorganics
Condensed matter: electrical, magnetic and optical
Surfaces, interfaces and thin films
Issue 6 (11 February 2009)
Received 2 September 2008, in final form 23 October 2008
Published 15 January 2009
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