N Chekurov et al 2009 Nanotechnology 20 065307 doi:10.1088/0957-4484/20/6/065307
N Chekurov1,2, K Grigoras1,2, A Peltonen2,3, S Franssila1,2 and I Tittonen1,2
Show affiliationsWe show that gallium-ion-implanted silicon serves as an etch mask for fabrication of high aspect ratio nanostructures by cryogenic plasma etching (deep reactive ion etching). The speed of focused ion beam (FIB) patterning is greatly enhanced by the fact that only a thin approx. 30 nm surface layer needs to be modified to create a mask for the etching step. Etch selectivity between gallium-doped and undoped material is at least 1000:1, greatly decreasing the mask erosion problems. The resolution of the combined FIB-DRIE process is 20 lines µm−1 with the smallest masked feature size of 40 nm. The maximum achieved aspect ratio is 15:1 (e.g. 600 nm high pillars 40 nm in diameter).
81.16.-c Methods of nanofabrication and processing
61.46.-w Structure of nanoscale materials
81.65.Cf Surface cleaning, etching, patterning
81.07.-b Nanoscale materials and structures: fabrication and characterization
Surfaces, interfaces and thin films
Issue 6 (11 February 2009)
Received 17 October 2008, in final form 26 November 2008
Published 14 January 2009
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