Z Y Zhang et al 2009 Nanotechnology 20 055204 doi:10.1088/0957-4484/20/5/055204
Z Y Zhang, Q Jiang, I J Luxmoore and R A Hogg
Show affiliationsBroadband superluminescent light emitting diodes are realized by a post-growth annealing process, on modulation p-doped multiple InAs/InGaAs/GaAs quantum dot layer structures, under a GaAs proximity cap. The device exhibits a large and flat emission with spectral width up to 132 nm at 2 mW. This is mainly attributed to the reduction of the energy separation between the ground state and the excited state, in addition to the optical quality of the intermixed modulation p-doped quantum dot materials being comparable to that of the as-grown sample.
85.60.Jb Light-emitting devices
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
Condensed matter: electrical, magnetic and optical
Surfaces, interfaces and thin films
Optics, quantum optics and lasers
Issue 5 (4 February 2009)
Received 15 September 2008, in final form 11 December 2008
Published 9 January 2009
Z Y Zhang et al 2009 Nanotechnology 20 055204
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