Philippe Caroff et al 2009 Nanotechnology 20 495606 doi:10.1088/0957-4484/20/49/495606
Philippe Caroff1, Maria E Messing, B Mattias Borg, Kimberly A Dick, Knut Deppert and Lars-Erik Wernersson
Show affiliationsWe demonstrate the growth of InSb-based nanowire heterostructures by metalorganic vapour phase epitaxy and use it to integrate InSb on extremely lattice-mismatched III–V nanowire templates made of InAs, InP, and GaAs. Influence of temperature, V/III ratio, and diameter are investigated in order to investigate the growth rate and morphology. The range of growth temperatures used for InSb nanowire growth is very similar to that used for planar growth due to the nature of the precursor decomposition. This makes optimization of growth parameters very important, and more difficult than for most other nanowire III–V materials. Analysis of the InSb nanowire epitaxial quality when grown on InAs, InP, and GaAs, along with InSb segment and particle compositions are reported. This successful direct integration of InSb nanowires, on nanowire templates with unprecedented strain levels show great promise for fabrication of vertical InSb devices.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.)
68.65.La Quantum wires (patterned in quantum wells)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
Issue 49 (9 December 2009)
Received 11 May 2009, in final form 16 October 2009
Published 11 November 2009
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