Kipil Lim et al 2009 Nanotechnology 20 495303 doi:10.1088/0957-4484/20/49/495303
Kipil Lim1, Jung-Sub Wi1, Sung-Wook Nam1, Soo-Yeon Park2, Jae-Jong Lee2,3 and Ki-Bum Kim1
Show affiliationsWe propose a new scheme of fabricating molds for UV-nanoimprint lithography (UV-NIL) that is both high resolution and has a high aspect ratio. The scheme involves the utilization of a hydrogen silsesquioxane (HSQ) electron beam resist for high resolution patterning and the sputter-deposited α-Si layer that defines the high-aspect-ratio mold pattern obtained from the high etch selectivity between the HSQ and the α-Si. We obtained high resolution line patterns and dot patterns with feature sizes of 40 nm and 25 nm, respectively. The aspect ratio of the patterns was about 3.5 for line patterns and about 5 for dot patterns. These molds also demonstrate successful UV-nanoimprint patterning.
78.40.-q Absorption and reflection spectra: visible and ultraviolet
Issue 49 (9 December 2009)
Received 3 August 2009, in final form 19 October 2009
Published 6 November 2009
Kipil Lim et al 2009 Nanotechnology 20 495303
Bradley J Brennan et al 2009 Nanotechnology 20 505203
G Scappucci et al 2009 Nanotechnology 20 495302
M P Nikiforov et al 2009 Nanotechnology 20 405708
Sergey I Rybchenko et al 2009 Nanotechnology 20 425607
Yi-Kuei Chang and Franklin Chau-Nan Hong 2009 Nanotechnology 20 195302
Kathy-Anne Brickman Soderberg et al 2009 New J. Phys. 11 055022
Cheng Chin et al 2009 New J. Phys. 11 055048
J Venugopal et al 2007 Nanotechnology 18 055101
Ayan Kar et al 2009 Nanotechnology 20 065704