G Scappucci et al 2009 Nanotechnology 20 495302 doi:10.1088/0957-4484/20/49/495302
G Scappucci1,2, G Capellini3, W C T Lee1 and M Y Simmons1,2
Show affiliationsIn this paper we demonstrate atomic-scale lithography on hydrogen terminated Ge(001). The lithographic patterns were obtained by selectively desorbing hydrogen atoms from a H resist layer adsorbed on a clean, atomically flat Ge(001) surface with a scanning tunneling microscope tip operating in ultra-high vacuum. The influence of the tip-to-sample bias on the lithographic process have been investigated. Lithographic patterns with feature-sizes from 200 to 1.8 nm have been achieved by varying the tip-to-sample bias. These results open up the possibility of a scanning-probe lithography approach to the fabrication of future atomic-scale devices in germanium.
81.16.Rf Nanoscale pattern formation
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
Instrumentation and measurement
Issue 49 (9 December 2009)
Received 25 June 2009, in final form 14 October 2009
Published 6 November 2009
G Scappucci et al 2009 Nanotechnology 20 495302
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