X J Hao et al 2009 Nanotechnology 20 485703 doi:10.1088/0957-4484/20/48/485703
Effects of Si-rich oxide layer stoichiometry on the structural and optical properties of Si QD/SiO2 multilayer films
X J Hao1, A P Podhorodecki2, Y S Shen3, G Zatryb2, J Misiewicz2 and M A Green1
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e Wyspiańskiego 27, 50-370
Wroclaw,
Poland
The effects of the stoichiometry of the Si-rich oxide (SRO) layer, O/Si ratio, on the structural and optical properties of SRO/SiO2 multilayer films were investigated in this work. SRO/SiO2 multilayer films with different O/Si ratios were grown by a co-sputtering technique, and Si quantum dots (QDs) were formed with post-deposition annealing. By transmission electron microscopy (TEM) and glancing incidence x-ray diffraction (GIXRD), it was found that the Si QD size decreases with increases in O/Si ratio. The photoluminescence (PL) spectrum varies with the O/Si ratio in band position, shape and intensity. In addition, it was observed that the absorption edge blue-shifts with increases in the O/Si ratio. The change in the absorption edge is consistent with strengthening quantum confinement effects in Si QDs, as indicated by TEM and GIXRD. The optical properties were also investigated by 2D photoluminescence excitation (2D-PLE) and lifetime measurements. The origin of emission and absorption is discussed based on the absorption, PL, 2D-PLE and decay time measurements.
- PACS
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61.50.Nw Crystal stoichiometry
81.15.Cd Deposition by sputtering
68.65.Hb Quantum dots (patterned in quantum wells)
78.55.-m Photoluminescence, properties and materials
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
- Subjects
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Condensed matter: electrical, magnetic and optical
Surfaces, interfaces and thin films
- Dates
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Issue 48 (2 December 2009)
Received 5 August 2009
Published 4 November 2009
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Effects of Si-rich oxide layer stoichiometry on the structural and optical properties of Si QD/SiO2 multilayer films
X J Hao et al 2009 Nanotechnology 20 485703
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