John Paul Strachan et al 2009 Nanotechnology 20 485701 doi:10.1088/0957-4484/20/48/485701
John Paul Strachan1, J Joshua Yang1, Ruth Münstermann1, Andreas Scholl2, Gilberto Medeiros-Ribeiro1, Duncan R Stewart1 and R Stanley Williams1
Show affiliationsWe used spatially-resolved NEXAFS (near-edge x-ray absorption fine structure) spectroscopy coupled with microscopy to characterize the electronic, structural and chemical properties of bipolar resistive switching devices. Metal/TiO2/metal devices were electroformed with both bias polarities and then physically opened to study the resulting material changes within the device. Soft x-ray absorption techniques allowed isolated study of the different materials present in the device with 100 nm spatial resolution. The resulting morphology and structural changes reveal a picture of localized polarity-independent heating occurring within these devices initiated by and subsequently accelerating polarity-dependent electrochemical reduction/oxidation processes.
85.30.De Semiconductor-device characterization, design, and modeling
84.30.Sk Pulse and digital circuits
82.45.Vp Semiconductor materials in electrochemistry
Condensed matter: electrical, magnetic and optical
Issue 48 (2 December 2009)
Received 25 June 2009, in final form 17 September 2009
Published 30 October 2009
John Paul Strachan et al 2009 Nanotechnology 20 485701
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