Yi-Lu Chang et al 2009 Nanotechnology 20 345203 doi:10.1088/0957-4484/20/34/345203
Yi-Lu Chang, Feng Li, Arya Fatehi and Zetian Mi
Show affiliationsWe have performed a detailed investigation of the molecular beam epitaxial growth and characterization of InN nanowires spontaneously formed on Si(111) substrates under nitrogen rich conditions. By employing an in situ deposited thin (~0.5 nm) In seeding layer prior to growth initiation, we have achieved, for the first time, non-tapered epitaxial InN nanowires, which exhibit record narrow spectral linewidths of 14 and 40 meV at 5 K and 300 K, respectively. Detailed studies confirm that the wires are nearly free of dislocations and stacking faults. The achievement of non-tapered, nearly homogeneous InN nanowires also enables, for the first time, the derivation of the band gap of InN directly from PL spectroscopy in the temperature range of 5–300 K.
68.65.-k Low-dimensional, mesoscopic, and nanoscale systems: structure and nonelectronic properties
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.07.-b Nanoscale materials and structures: fabrication and characterization
Condensed matter: electrical, magnetic and optical
Issue 34 (26 August 2009)
Received 30 April 2009, in final form 10 July 2009
Published 4 August 2009
Yi-Lu Chang et al 2009 Nanotechnology 20 345203
A S Alexandrov 2008 J. Phys.: Condens. Matter 20 192202
Sung-Baek Seo et al 2007 Nanotechnology 18 475105
A V Soldatov et al 2009 J. Phys.: Conf. Ser. 190 012072
M Pavlinsky et al 1998 Phys. Scr. 1998 33
Daoxin Dai et al 2009 New J. Phys. 11 125016
T Riehm et al 2008 J. Phys.: Conf. Ser. 131 012045
D C Schram et al 2009 J. Phys.: Conf. Ser. 192 012012
B Bhattacharya et al 2007 Nanotechnology 18 485711
F Simon 2008 J. Phys.: Conf. Ser. 110 092029