Jia Sun et al 2009 Nanotechnology 20 335204 doi:10.1088/0957-4484/20/33/335204
Jia Sun, Aixia Lu, Liping Wang, Yu Hu and Qing Wan
Show affiliationsTransparent thin-film transistors with bottom-gate figure are fabricated by sputter deposition of an Sb-doped SnO2 nanocrystal channel layer onto glass substrates at room temperature with plasma-enhanced chemical vapor deposition SiO2 gate dielectrics and sputtering ITO electrodes. These devices exhibit high-performance n-type transistor characteristics operating in depletion mode with an ultrahigh field-effect mobility of 158 cm2 V−1 s−1. The current on/off ratio and the subthreshold swing are found to be 3 × 104 and 0.2 V/decade, respectively. These achievements demonstrate that SnO2-based nanocrystal thin-film transistors are promising for high-speed transparent and flexible electronics on temperature-sensitive substrates.
81.16.-c Methods of nanofabrication and processing
85.30.De Semiconductor-device characterization, design, and modeling
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.)
81.07.Bc Nanocrystalline materials
Issue 33 (19 August 2009)
Received 15 May 2009, in final form 29 June 2009
Published 28 July 2009
Jia Sun et al 2009 Nanotechnology 20 335204
Gwang-Hee Lee et al 2009 Nanotechnology 20 295205
Kayhan Gültekin et al. 2009 ApJ 695 1577
I V Kityk et al 2007 J. Phys.: Condens. Matter 19 016204
Carlo Amadeo Alonzo et al 2007 New J. Phys. 9 132
G. Bryden et al. 2009 ApJ 705 1226
Anisa Mnyusiwalla et al 2003 Nanotechnology 14 R9
Chi-Liang Kuo and Michael H Huang 2008 Nanotechnology 19 155604
Dong-Ick Son et al 2009 Nanotechnology 20 195203
C Czekalla et al 2008 Nanotechnology 19 115202