Yi-Kuei Chang and Franklin Chau-Nan Hong 2009 Nanotechnology 20 235202 doi:10.1088/0957-4484/20/23/235202
Yi-Kuei Chang1 and Franklin Chau-Nan Hong1,2,3
Show affiliationsZinc oxide nanowire field-effect transistors (NW-FETs) were fabricated combining the dielectrophoresis (DEP) and the hot-pressing methods. DEP was used to position both ends of the nanowires on top of the source and the drain electrodes, respectively. Hot-pressing of nanowires on the electrodes was then employed to ensure good contacts between the nanowires and the electrodes. The good device performance achieved with our method of fabrication indicates that DEP combined with hot-pressing has the potential to be applied to the fabrication of flexible electronics on a roll-to-roll basis.
81.07.-b Nanoscale materials and structures: fabrication and characterization
Nanoscale science and low-D systems
Issue 23 (10 June 2009)
Received 8 February 2009, in final form 9 April 2009
Published 18 May 2009
Yi-Kuei Chang and Franklin Chau-Nan Hong 2009 Nanotechnology 20 235202
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