Tae-Wook Kim et al 2009 Nanotechnology 20 025201 doi:10.1088/0957-4484/20/2/025201
Tae-Wook Kim, Hyejung Choi, Seung-Hwan Oh, Minseok Jo, Gunuk Wang, Byungjin Cho, Dong-Yu Kim, Hyunsang Hwang and Takhee Lee1
Show affiliationsThe resistive switching characteristics of polyfluorene-derivative polymer material in a sub-micron scale via-hole device structure were investigated. The scalable via-hole sub-microstructure was fabricated using an e-beam lithographic technique. The polymer non-volatile memory devices varied in size from 40 × 40 µm2 to 200 × 200 nm2. From the scaling of junction size, the memory mechanism can be attributed to the space–charge-limited current with filamentary conduction. Sub-micron scale polymer memory devices showed excellent resistive switching behaviours such as a large ON/OFF ratio (ION/IOFF~104), excellent device-to-device switching uniformity, good sweep endurance, and good retention times (more than 10 000 s). The successful operation of sub-micron scale memory devices of our polyfluorene-derivative polymer shows promise to fabricate high-density polymer memory devices.
84.32.Dd Connectors, relays, and switches
Soft matter, liquids and polymers
Issue 2 (14 January 2009)
Received 5 August 2008, in final form 9 October 2008
Published 9 December 2008
Tae-Wook Kim et al 2009 Nanotechnology 20 025201
Minglei Ji et al 2009 Nanotechnology 20 075101
Kevin Bube et al 2006 J. Phys. D: Appl. Phys. 39 1405
J Raju et al 1990 Meas. Sci. Technol. 1 903
H Bunz et al 2008 Environ. Res. Lett. 3 035001
O Möhler et al 2008 Environ. Res. Lett. 3 025007
I V Gensch et al 2008 Environ. Res. Lett. 3 035003
J T Pisano et al 2003 Meas. Sci. Technol. 14 2089
K T Park et al 1987 J. Phys. C: Solid State Phys. 20 1241
Joe F Jabre et al 2007 Physiol. Meas. 28 95