Yi-Kuei Chang and Franklin Chau-Nan Hong 2009 Nanotechnology 20 195302 doi:10.1088/0957-4484/20/19/195302
Yi-Kuei Chang1 and Franklin Chau-Nan Hong1,2,3
Show affiliationsA method with the potential to fabricate large-area nanowire field-effect transistors (NW-FETs) was demonstrated in this study. Using a high-speed roller (20–80 cm min−1), transfer printing was successfully employed to transfer vertically aligned zinc oxide (ZnO) nanowires grown on a donor substrate to a polydimethylsiloxane (PDMS) stamp and then print the ordered ZnO nanowire arrays on the received substrate for the fabrication of NW-FETs. ZnO NW-FETs fabricated by this method exhibit high performances with a threshold voltage of around 0.25 V, a current on/off ratio as high as 105, a subthreshold slope of 360 mV/dec, and a field-effect mobility of around 90 cm2 V−1 s−1. The excellent device characteristics suggest that the roll-transfer printing technique, which is compatible with the roll-to-roll (R2R) process and operated in atmosphere, has a good potential for the high-speed fabrication of large-area nanowire transistors for flexible devices and flat panel displays.
81.16.-c Methods of nanofabrication and processing
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
85.30.De Semiconductor-device characterization, design, and modeling
Issue 19 (13 May 2009)
Received 5 January 2009, in final form 20 March 2009
Published 20 April 2009
Yi-Kuei Chang and Franklin Chau-Nan Hong 2009 Nanotechnology 20 195302
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