Liping Li et al 2009 Nanotechnology 20 155706 doi:10.1088/0957-4484/20/15/155706
Liping Li, Junjie Liu, Yiguo Su, Guangshe Li1, Xiaobo Chen, Xiaoqing Qiu and Tingjiang Yan
Show affiliationsHighly crystalline SnO2 nanocrystals with and without Zn2+ doping were directly prepared by a solvothermal method. By systematic characterizations using x-ray diffraction, transmission electron microscopy, infrared spectra, and UV–vis spectra, it is demonstrated that all samples crystallized in a single phase of rutile structure, and that upon Zn2+ doping particle sizes closer to the exciton Bohr radius (2.7 nm) of SnO2 were achieved, while the particle size of SnO2 nanoparticles was as large as about 12 nm without Zn2+ doping. The smaller particle sizes for Zn2+ doped nanoparticles had led to a lattice expansion, a blue-shift of the surface phonon mode for the anti-symmetric Sn–O stretching vibration, and a significantly narrowed band-gap energy, opposite to what is theoretically predicted by the quantum size effect. The photocatalytic activity of the doped samples is measured by monitoring the degradation of methylene blue dye in an aqueous solution under UV-radiation exposure. It is found that Zn2+ doped SnO2 showed excellent activity toward photodegradation of methylene blue solution under UV light irradiation. These observations were interpreted in terms of the Zn2+ doping at the surface sites of SnO2 nanoparticles and the relevant defects that have increased the surface active sites and moreover improved the ratio of surface charge carrier transfer rate to the electron–hole recombination rate. These results illustrate the potential of rationally modifying the particle size and surface defect characteristics for novel semiconductor oxide photocatalysts.
78.30.Hv Other nonmetallic inorganics
81.16.-c Methods of nanofabrication and processing
73.63.Bd Nanocrystalline materials
Condensed matter: electrical, magnetic and optical
Issue 15 (15 April 2009)
Received 23 October 2008, in final form 10 February 2009
Published 25 March 2009
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