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Gallium assisted plasma enhanced chemical vapor deposition of silicon nanowires

I Zardo1, L Yu2, S Conesa-Boj3, S Estradé3, Pierre Jean Alet2, J Rössler1, M Frimmer1, P Roca i Cabarrocas2, F Peiró3, J Arbiol3,4, J R Morante3,5 and A Fontcuberta i Morral1,6

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Silicon nanowires have been grown with gallium as catalyst by plasma enhanced chemical vapor deposition. The morphology and crystalline structure has been studied by electron microscopy and Raman spectroscopy as a function of growth temperature and catalyst thickness. We observe that the crystalline quality of the wires increases with the temperature at which they have been synthesized. The crystalline growth direction has been found to vary between \langle 111\rangle
and \langle 112\rangle , depending on both the growth temperature and catalyst thickness. Gallium has been found at the end of the nanowires, as expected from the vapor–liquid–solid growth mechanism. These results represent good progress towards finding alternative catalysts to gold for the synthesis of nanowires.


PACS

81.16.Be Chemical synthesis methods

78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures

81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.)

61.46.-w Structure of nanoscale materials

68.65.-k Low-dimensional, mesoscopic, and nanoscale systems: structure and nonelectronic properties

78.30.Am Elemental semiconductors and insulators

Subjects

Condensed matter: electrical, magnetic and optical

Semiconductors

Surfaces, interfaces and thin films

Nanoscale science and low-D systems

Dates

Issue 15 (15 April 2009)

Received 8 January 2009, in final form 14 February 2009

Published 25 March 2009



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