I Zardo et al 2009 Nanotechnology 20 155602 doi:10.1088/0957-4484/20/15/155602
I Zardo1, L Yu2, S Conesa-Boj3, S Estradé3, Pierre Jean Alet2, J Rössler1, M Frimmer1, P Roca i Cabarrocas2, F Peiró3, J Arbiol3,4, J R Morante3,5 and A Fontcuberta i Morral1,6
Show affiliationsSilicon nanowires have been grown with gallium as catalyst by plasma enhanced chemical vapor deposition. The morphology and crystalline structure has been studied by electron microscopy and Raman spectroscopy as a function of growth temperature and catalyst thickness. We observe that the crystalline quality of the wires increases with the temperature at which they have been synthesized. The crystalline growth direction has been found to vary between
and
, depending on both the growth temperature and catalyst thickness. Gallium has been found at the end of the nanowires, as expected from the vapor–liquid–solid growth mechanism. These results represent good progress towards finding alternative catalysts to gold for the synthesis of nanowires.
81.16.Be Chemical synthesis methods
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.)
61.46.-w Structure of nanoscale materials
68.65.-k Low-dimensional, mesoscopic, and nanoscale systems: structure and nonelectronic properties
Condensed matter: electrical, magnetic and optical
Issue 15 (15 April 2009)
Received 8 January 2009, in final form 14 February 2009
Published 25 March 2009
I Zardo et al 2009 Nanotechnology 20 155602
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