Katsuhiro Tomioka et al 2009 Nanotechnology 20 145302 doi:10.1088/0957-4484/20/14/145302
Selective-area growth of vertically aligned GaAs and GaAs/AlGaAs core–shell nanowires on Si(111) substrate
Katsuhiro Tomioka1,3, Yasunori Kobayashi1, Junichi Motohisa1, Shinjiroh Hara2 and Takashi Fukui1,2
Show affiliationsWe report on selective-area growth of vertically aligned GaAs nanowires on Si(111) substrate. Modification of the initial Si(111) surface by pretreatment under an AsH3 atmosphere and low-temperature growth of GaAs were important for controlling the growth orientations of the GaAs nanowire on the Si(111) surface. We also found that the size of openings strongly affected the growth morphology of GaAs nanowires on Si(111). Small diameter openings reduced the antiphase defects and improved the optical properties in the GaAs nanowires. Moreover, we realized coherent growth without misfit dislocation at the GaAs/Si interface. Finally, we demonstrated fabrication of a GaAs/AlGaAs core–shell nanowire array on a Si surface and revealed that the luminescence intensity was markedly enhanced by passivation effects. These results are promising for future III–V nanowire-based optoelectronic integration on Si platforms.
- PACS
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68.65.La Quantum wires (patterned in quantum wells)
81.16.-c Methods of nanofabrication and processing
- Subjects
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Condensed matter: electrical, magnetic and optical
- Dates
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Issue 14 (8 April 2009)
Received 18 December 2008, in final form 23 January 2009
Published 17 March 2009
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Selective-area growth of vertically aligned GaAs and GaAs/AlGaAs core–shell nanowires on Si(111) substrate
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