Canet Acikgoz et al 2009 Nanotechnology 20 135304 doi:10.1088/0957-4484/20/13/135304
Canet Acikgoz1,2, Mark A Hempenius2, G Julius Vancso2,3 and Jurriaan Huskens1,3
Show affiliationsThe availability of suitable resist materials is essential for nanoimprint lithography (NIL). In this work, the application of poly(ferrocenylmethylphenylsilane) (PFMPS) as a new type of imprint resist is reported. As PFMPS contains iron and silicon in the main chain, it possesses a very high resistance to reactive ion etching. Polymer patterns formed after imprinting were transferred into silicon substrates owing to the high etch resistivity of PFMPS. The parameters for imprinting, such as polymer molar mass and initial film thickness, were investigated. A decrease in the initial film thickness facilitated the residual layer removal, as well as the pattern transfer. Only upon complete removal of the residual layer with argon plasma did pattern transfer result in aspect ratios up to 4:1 and less surface roughness.
81.65.Cf Surface cleaning, etching, patterning
68.35.B- Structure of clean surfaces (and surface reconstruction)
Soft matter, liquids and polymers
Surfaces, interfaces and thin films
Issue 13 (1 April 2009)
Received 20 August 2008
Published 10 March 2009
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