C Tan et al 2009 Nanotechnology 20 125303 doi:10.1088/0957-4484/20/12/125303
C Tan1, C S Peng1, J Pakarinen1, M Pessa1, V N Petryakov2, Yu K Verevkin2, J Zhang3, Z Wang3, S M Olaizola4, T Berthou5 and S Tisserand5
Show affiliationsWe present a simplified method to employ laser interference lithography for the fabrication of ordered nanostructures. Neither resist, nor an elaborate fabrication process was needed. Four-beam interference patterns generated in this work included periodic arrays of holes in GaAs, covered with SiO2 bubbles, and they were directly written into the sample. The diameters of the smallest holes were less than 30 nm. We propose a model to interpret the results.
81.07.-b Nanoscale materials and structures: fabrication and characterization
Issue 12 (25 March 2009)
Received 31 July 2008, in final form 5 December 2008
Published 3 March 2009
C Tan et al 2009 Nanotechnology 20 125303
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