J A Davis et al 2008 Nanotechnology 19 055205 doi:10.1088/0957-4484/19/05/055205
J A Davis1, L V Dao1, X Wen1, C Ticknor1, P Hannaford1, V A Coleman2, H H Tan2, C Jagadish2, K Koike3, S Sasa3, M Inoue3 and M Yano3
Show affiliationsStrong suppression of the effects caused by the internal electric field in ZnO/ZnMgO quantum wells following ion-implantation and rapid thermal annealing, is revealed by photoluminescence, time-resolved photoluminescence, and band structure calculations. The implantation and annealing induces Zn/Mg intermixing, resulting in graded quantum well interfaces. This reduces the quantum-confined Stark shift and increases electron–hole wavefunction overlap, which significantly reduces the exciton lifetime and increases the oscillator strength.
61.72.uj III–V and II–VI semiconductors
Condensed matter: electrical, magnetic and optical
Surfaces, interfaces and thin films
Issue 5 (6 February 2008)
Received 31 October 2007
Published 14 January 2008
J A Davis et al 2008 Nanotechnology 19 055205
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