Yuping He et al 2008 Nanotechnology 19 465602 doi:10.1088/0957-4484/19/46/465602
Yuping He, Yongjun Liu and Yiping Zhao
Show affiliationsA unique diffusion barrier structure, consisting of layers of a Ti nanorod array and Ti film, has been fabricated on Si substrate for a subsequent 2 at.% Ti-doped Mg film deposition using a combinational technique of multilayer growth, co-deposition and dynamic shadowing growth. The hydrogenation of the Ti-doped Mg film on such a barrier structure shows that the barrier can prevent direct Mg–Si contact and suppress the formation of Mg2Si alloy in a high-temperature process. When this film has been hydrogenated at temperatures T≤300 °C for approximately 150 h, tetragonal single-crystal MgH2 nanowires are formed on the surface of the Ti-doped Mg film. The hydrogenation time and temperature are the two main factors for the nanowire formation. The doping of Ti also plays a significant role. This result reveals that complicated dynamic processes could occur during the hydrogenation of Ti-doped Mg film when Mg2Si formation can be eliminated by an effective diffusion barrier layer.
81.07.-b Nanoscale materials and structures: fabrication and characterization
61.46.-w Structure of nanoscale materials
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
78.30.Hv Other nonmetallic inorganics
Condensed matter: electrical, magnetic and optical
Surfaces, interfaces and thin films
Issue 46 (19 November 2008)
Received 21 July 2008, in final form 9 September 2008
Published 22 October 2008
Yuping He et al 2008 Nanotechnology 19 465602
J-G Fan and Y-P Zhao 2008 Nanotechnology 19 155707
J-G Fan et al 2008 Nanotechnology 19 045713
J-G Fan et al 2004 Nanotechnology 15 501
Kazuyuki Tanaka and D M Titterington 2007 J. Phys. A: Math. Theor. 40 11285
Kazuyuki Tanaka 2002 J. Phys. A: Math. Gen. 35 R81
Kazuyuki Tanaka et al 2004 J. Phys. A: Math. Gen. 37 8675
Kazuyuki Tanaka et al 2003 J. Phys. A: Math. Gen. 36 11023
R W Boswell 1985 Plasma Phys. Control. Fusion 27 405
Toshiyuki Tanaka 2009 J. Phys.: Conf. Ser. 143 012020